schottky barrier diode RB168M-60 l applications l dimensions (unit : mm) l land size figure (unit : mm) general rectification l features 1)small power mold type. (pmdu) 2)low i r 3)high reliability l construction silicon epitaxial l structure l taping specifications (unit : mm) l absolute maximum ratings (ta=25c) symbol unit v rm v v r v io a i fsm a tj c tstg c l electrical characteristics (ta=25c) symbol min. typ. max. unit conditions v f - 0.63 0.68 v i f =1.0a i r - 0.10 1.5 a v r =60v parameter limits reverse voltage (repetitive) 60 reverse voltage (dc) 60 reverse current average rectified forward current (*1) 1 forward current surge peak (60hz ? 1cyc) 30 junction temperature 150 storage temperature - 55 to + 150 (*1)mounted on epoxy board. 180half sine wave parameter forward voltage rohm : pmdu jedec :sod - 123 manufacture date pmdu 1/3 2011.06 - rev.a data sheet www.rohm.com ? 2011 rohm co., ltd. all rights reserved. >>>??<>>>y >y>>a?<>>>y >t>>a?<>>>y >?>>?<>>>t >>>??<>>>y >>>y?<>>>y fff>>>>> 1.2 3.05 0.85 >>>?<>>>y >t>>?<>>>> 3 >y>>>?<>>>> >y>>?>y?<>>>y >>>?<>>>y 3 >y>>?<>>>y >?>>?<>>>> >y>>?>?<>>>y >?>>?<>>>t >>>t>?<>>>> 1.5max >?>>?>y?<>>>y
RB168M-60 0 0.5 1 1.5 0 0.5 1 1.5 2 0.1 1 10 100 1000 0.001 0.01 0.1 1 10 100 1000 mounted on epoxy board rth(j - a) rth(j - c) 0 50 100 150 200 0.1 1 10 100 t ifsm 0 50 100 1 10 100 8.3ms ifsm 1cyc 8.3ms 0 5 10 15 20 25 30 ave:6.8ns ta=25 i f =0.5a i r =1a irr=0.25 * i r n=10pcs 0 50 100 150 ave:86.0a 8.3ms 1cyc 1 10 100 1000 0 5 10 15 20 25 30 190 200 210 220 230 240 ave:207pf ta=25 f=1mhz v r =10v n=10pcs 0 20 40 60 80 100 120 140 160 570 580 590 600 610 620 630 0.1 1 10 100 1000 10000 100000 1000000 0 10 20 30 40 50 60 ta=25 ta=125 ta=75 ta=150 ta= - 25 0.001 0.01 0.1 1 0 100 200 300 400 500 600 700 ta=125 ta=75 ta=25 ta= - 25 ta=150 forward voltage : v f (mv) v f - i f characteristics forward current:i f (a) reverse current:i r (na) reverse voltage : v r (v) v r - i r characteristics capacitance between terminals:ct(pf) reverse voltage : v r (v) v r - ct characteristics v f dispersion map forward voltage:v f (mv) reverse current:i r (na) i r dispersion map capacitance between terminals:ct(pf) ct dispersion map i fsm dispersion map peak surge forward current:i fsm (a) peak surge forward current:i fsm (a) number of cycles i fsm - cycle characteristics peak surge forward current:i fsm (a) time:t(ms) i fsm - t characteristics time:t(s) rth - t characteristics transient thaermal impedance:rth ( /w) forward power dissipation:pf(w) average rectified forward current io(a) io - pf characteristics trr dispersion map reverse recovery time:trr(ns) f=1mhz ave:594.1mv ta=25 i f =1a n=30pcs ta=25 v r =60v n=30pcs ave:79.1na dc d=1/2 sin( 180) 2/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
RB168M-60 0 5 10 15 20 25 30 c=200pf r=0 c=100pf r=1.5k ave:4.10kv no break at 30kv 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 0 0.002 0.004 0.006 0.008 0.01 0 10 20 30 40 50 60 reverse power dissipation:p r (w) reverse voltage : v r (v) v r - p r characteristics ambient temperature:ta( ) derating curve (io - ta) average rectified forward current:io(a) average rectified forward current:io(a) case temparature:tc( ) derating curve (io - tc) sin( 180) d=1/2 sin( 180) t tj=150 d=t/t t v r io v r =30v 0a 0v electrostatic discharge test esd(kv) esd dispersion map t tj=150 d=t/t t v r io v r =30v 0a 0v dc dc d=1/2 dc d=1/2 sin( 180) 3/3 2011.06 - rev.a www.rohm.com ? 2011 rohm co., ltd. all rights reserved. data sheet
r 1 120 a ww w .rohm.com ? 20 1 1 rohm co., ltd. all rights reserved. notice rohm customer support system http://ww w . r ohm.com/contact/ thank you for your accessing to rohm p r oduct informations. mo r e detail p r oduct informations and catalogs a r e available, please contact us. notes
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